Datasheet ON Semiconductor MUR8100EG — 数据表

MUR8100E, MUR880E
MUR8100E is a Preferred Device SWITCHMODEt Power Rectifiers Ultrafast "E'' Series with High Reverse Energy Capability
The MUR8100 and MUR880E diodes are designed for use in switching power supplies, inverters and as free wheeling diodes.
Features http://onsemi.com 20 mJ Avalanche Energy Guaranteed Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175°C Operating Junction Temperature Popular TO-220 Package Epoxy Meets UL 94 V-0 @ 0.125 in. Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 V Pb-Free Packages are Available* ULTRAFAST RECTIFIERS 8.0 A, 800 V -1000 V
1 4 3 4 TO-220AC CASE 221B 1 3 Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MARKING DIAGRAM AY WWG U8xxxE KA A Y WW G U8xxxE KA = = = = = Assembly Location Year Work Week Pb-Free Package Device Code xxx = 100 or 80 = Diode Polarity ORDERING INFORMATION
Device MUR8100E MUR8100EG MUR880E MUR880EG *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008 Package TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail Preferred devices are recommended choices for future use and best overall value. June, 2008 -Rev. 4 1 Publication Order Number: MUR8100E/D MUR8100E, MUR880E
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 150°C) Total Device Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150°C) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction and Storage Temperature Range Symbol VRRM VRWM VR IF(AV) IFM IFSM TJ, Tstg Value Unit V 800 1000 8.0 16 100 -65 to +175 A A A °C MUR880E MUR8100E Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS
Characteristic Maximum Thermal Resistance, Junction-t …