Datasheet VS-GB200TS60NPBF - Vishay IGBT MODULE, 600 V, 209 A, INT-A-PAK — 数据表

Vishay VS-GB200TS60NPBF

Part Number: VS-GB200TS60NPBF

详细说明

Manufacturer: Vishay

Description: IGBT MODULE, 600 V, 209 A, INT-A-PAK

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Docket:
GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A
FEATURES
· Generation 5 Non Punch Through (NPT) technology · Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz · Low VCE(on) · 10 s short circuit capability · Square RBSOA · Positive VCE(on) temperature coefficient

Specifications:

  • Collector Emitter Voltage V(br)ceo: 600 V
  • Collector Emitter Voltage Vces: 2.6 V
  • DC Collector Current: 209 A
  • Number of Pins: 3
  • Operating Temperature Range: -40°C to +150°C
  • Power Dissipation: 781 W
  • Transistor Case Style: INT-A-PAK
  • Transistor Polarity: NPN
  • RoHS: Yes

其他名称:

VSGB200TS60NPBF, VS GB200TS60NPBF