Datasheet C4D02120E - Cree SILICON CARBIDE (SIC) SCHOTTKY DIODE, 5.9 A, 1200 V, TO-252 — 数据表

Cree C4D02120E

Part Number: C4D02120E

详细说明

Manufacturer: Cree

Description: SILICON CARBIDE (SIC) SCHOTTKY DIODE, 5.9 A, 1200 V, TO-252

Specifications:

  • Diode Type: SiC Schottky
  • Forward Current If(AV): 5.9 A
  • Forward Surge Current Ifsm Max: 19 A
  • Forward Voltage VF Max: 1.8 V
  • Repetitive Reverse Voltage Vrrm Max: 1200 V

RoHS: Yes