Datasheet MBR3100G - ON Semiconductor DIODE, SCHOTTKY, 3 A, DO-201AD — 数据表

ON Semiconductor MBR3100G

Part Number: MBR3100G

详细说明

Manufacturer: ON Semiconductor

Description: DIODE, SCHOTTKY, 3 A, DO-201AD

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Docket:
MBR3100
Preferred Device
Axial Lead Rectifier
This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode.

State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features

Simulation ModelSimulation Model

Specifications:

  • Breakdown Voltage Max: 100 V
  • Current Ifsm: 150 A
  • Current Ir Max: 600 µA
  • Diode Type: Schottky
  • Forward Current If(AV): 3 A
  • Forward Surge Current Ifsm Max: 150 A
  • Forward Voltage VF Max: 790 mV
  • Forward Voltage: 790 mV
  • Junction Temperature Tj Max: 175°C
  • Mounting Type: Axial Leaded
  • Number of Pins: 2
  • Package / Case: DO-201AD
  • Repetitive Reverse Voltage Vrrm Max: 100 V
  • SVHC: No SVHC (15-Dec-2010)

RoHS: Yes