Datasheets - IGBT单晶体管 Toshiba

小节: "IGBT单晶体管"
制造商: "Toshiba"
搜索结果: 13 输出量: 1-13

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  1. Datasheet GT50J325 - Toshiba IGBT, 600 V, TO-3P(LH)
    Part Number: GT50J325 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(LH) Download Data Sheet Docket: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching ...
  2. Datasheet GT50J102 - Toshiba IGBT, 600 V, TO-3P(LH)
    Part Number: GT50J102 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(LH) Download Data Sheet Docket: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL ...
  1. Datasheet GT30J324 - Toshiba IGBT, 600 V, TO-3P(N)
    Part Number: GT30J324 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(N) Download Data Sheet Docket: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching ...
  2. Datasheet GT25Q102 - Toshiba IGBT, 1200 V, TO-3P(LH)
    Part Number: GT25Q102 Manufacturer: Toshiba Description: IGBT, 1200 V, TO-3P(LH) Download Data Sheet Docket: GT25Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications Unit: mm ...
  3. Datasheet GT20J101 - Toshiba IGBT, 600 V, TO-3P(N)
    Part Number: GT20J101 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(N) Download Data Sheet Docket: GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications Unit: mm · · · · ...
  4. Datasheet GT15J301 - Toshiba IGBT, 600 V, TO-220NIS
    Part Number: GT15J301 Manufacturer: Toshiba Description: IGBT, 600 V, TO-220NIS Download Data Sheet Docket: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL ...
  5. Datasheet GT10Q101 - Toshiba IGBT, 1200 V, TO-3P(N)
    Part Number: GT10Q101 Manufacturer: Toshiba Description: IGBT, 1200 V, TO-3P(N) Download Data Sheet Docket: GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm The 3rd ...
  6. Datasheet GT30J301 - Toshiba IGBT, 600 V, TO-3P(N)
    Part Number: GT30J301 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(N) Download Data Sheet Docket: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL ...
  7. Datasheet GT15J321 - Toshiba IGBT, 600 V, TO-220NIS
    Part Number: GT15J321 Manufacturer: Toshiba Description: IGBT, 600 V, TO-220NIS Download Data Sheet Docket: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching ...
  8. Datasheet GT10J303 - Toshiba IGBT, 600 V, TO-220NIS
    Part Number: GT10J303 Manufacturer: Toshiba Description: IGBT, 600 V, TO-220NIS Download Data Sheet Docket: Specifications: Transistor Type: HP SW IGBT Max Voltage Vce Sat: 2.7 V Collector-to-Emitter Breakdown Voltage: 600 V Transistor Case Style: ...
  9. Datasheet GT20J321 - Toshiba IGBT, 600 V, TO-220NIS
    Part Number: GT20J321 Manufacturer: Toshiba Description: IGBT, 600 V, TO-220NIS Download Data Sheet Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 2.45 V Collector-to-Emitter Breakdown Voltage: 600 V Transistor Case Style: TO-220NIS ...
  10. Datasheet GT20J301 - Toshiba IGBT, 600 V, TO-3P(N)
    Part Number: GT20J301 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(N) Download Data Sheet Specifications: Transistor Type: HP SW IGBT Max Voltage Vce Sat: 2.7 V Collector-to-Emitter Breakdown Voltage: 600 V Transistor Case Style: TO-3P (N) ...
  11. Datasheet GT15Q301 - Toshiba IGBT, 1200 V, TO-3P(N)
    Part Number: GT15Q301 Manufacturer: Toshiba Description: IGBT, 1200 V, TO-3P(N) Download Data Sheet Specifications: Transistor Type: HP SW IGBT Max Voltage Vce Sat: 2.7 V Collector-to-Emitter Breakdown Voltage: 1200 V Transistor Case Style: TO-3P ...

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