Datasheet JX4S0040R120M (JX Semiconductor) - 6
| 制造商 | JX Semiconductor |
| 描述 | 1200V, 60A, 45mΩ , N-Channel, Silicon Carbide MOSFET in TO-247-3 package |
| 页数 / 页 | 10 / 6 — JX4S0040R120M. 1200V, N.Channel, Silicon Carbide MOSFET. Typical … |
| 文件格式/大小 | PDF / 608 Kb |
| 文件语言 | 英语 |
JX4S0040R120M. 1200V, N.Channel, Silicon Carbide MOSFET. Typical Performance. Figure 9. Figure 10. Figure 11. Figure 12
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JX4S0040R120M 1200V, N.Channel, Silicon Carbide MOSFET Typical Performance Figure 9 Figure 10
3rd Quadrant Characteristic at 25°C Output Capacitor Stored Energy
Figure 11 Figure 12
Capacitances vs. Drain-Source Max Power Dissipation Derating vs TC
Product Data Sheet
6
JX.3T04.19A.A2
Document Outline JX4S0040R120M General Description Ordering Informations JX4S0040R120M MOSFET Characteristics Thermal Characteristics Typical Performance Figure 1 Figure 3 Figure 2 Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Figure 8 Typical Performance Figure 9 Figure 11 Figure 10 Figure 12 Typical Performance Figure 13 Figure 15 Figure 14 Figure 16 Typical Performance Figure 17 Figure 18 Notes & Disclaimer Contact Info
3rd Quadrant Characteristic at 25°C Output Capacitor Stored Energy
Figure 11 Figure 12
Capacitances vs. Drain-Source Max Power Dissipation Derating vs TC
Product Data Sheet
6
JX.3T04.19A.A2
Document Outline JX4S0040R120M General Description Ordering Informations JX4S0040R120M MOSFET Characteristics Thermal Characteristics Typical Performance Figure 1 Figure 3 Figure 2 Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Figure 8 Typical Performance Figure 9 Figure 11 Figure 10 Figure 12 Typical Performance Figure 13 Figure 15 Figure 14 Figure 16 Typical Performance Figure 17 Figure 18 Notes & Disclaimer Contact Info