Datasheet JX3S0750170M (JX Semiconductor) - 7
| 制造商 | JX Semiconductor |
| 描述 | 1700V SiC N-Channel MOSFET in TO-247 package |
| 页数 / 页 | 8 / 7 — JX3S0750170M. Package Drawing:. Dimensions. UNIT |
| 文件格式/大小 | PDF / 631 Kb |
| 文件语言 | 英语 |
JX3S0750170M. Package Drawing:. Dimensions. UNIT
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JX3S0750170M Package Drawing: Dimensions
（
UNIT
：
mm
） DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES SYMBOLS MIN TYPE MAX MIN TYPE MAX A 4.80 5.00 5.20 0.189 0.197 0.205 A1 2.85 3.00 3.15 0.112 0.118 0.124 b 1.16 1.22 1.27 0.046 0.048 0.050 b1 2.03 2.06 2.10 0.080 0.081 0.083 b2 3.03 3.06 3.10 0.119 0.120 0.122 C 0.55 0.60 0.65 0.022 0.024 0.026 D 20.80 21.00 21.20 0.819 0.827 0.835 D1 15.94 16.24 16.54 0.628 0.639 0.651 D2 4.30 BSC 0.169 BSC e 5.44 BSC 0.214 BSC E 15.95 16.15 16.35 0.628 0.636 0.644 E1 13.82 14.02 14.26 0.544 0.552 0.561 L 34.65 35.05 35.45 1.364 1.380 1.396 L1 3.86 0.152 - - - - Q 5.85 5.95 6.05 0.230 0.234 0.238 ∅P 3.45 3.60 3.75 0.136 0.142 0.148 θ 17.5° 0.689 ° 7 JX-3T04-02A A/2 Document Outline Thermal Characteristics Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig3. Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Drain-Source Voltage VDS (V) Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
（
UNIT
：
mm
） DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES SYMBOLS MIN TYPE MAX MIN TYPE MAX A 4.80 5.00 5.20 0.189 0.197 0.205 A1 2.85 3.00 3.15 0.112 0.118 0.124 b 1.16 1.22 1.27 0.046 0.048 0.050 b1 2.03 2.06 2.10 0.080 0.081 0.083 b2 3.03 3.06 3.10 0.119 0.120 0.122 C 0.55 0.60 0.65 0.022 0.024 0.026 D 20.80 21.00 21.20 0.819 0.827 0.835 D1 15.94 16.24 16.54 0.628 0.639 0.651 D2 4.30 BSC 0.169 BSC e 5.44 BSC 0.214 BSC E 15.95 16.15 16.35 0.628 0.636 0.644 E1 13.82 14.02 14.26 0.544 0.552 0.561 L 34.65 35.05 35.45 1.364 1.380 1.396 L1 3.86 0.152 - - - - Q 5.85 5.95 6.05 0.230 0.234 0.238 ∅P 3.45 3.60 3.75 0.136 0.142 0.148 θ 17.5° 0.689 ° 7 JX-3T04-02A A/2 Document Outline Thermal Characteristics Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig3. Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Drain-Source Voltage VDS (V) Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area