Datasheet BCX38A, BCX38B, BCX38C (Diodes) - 2
| 制造商 | Diodes |
| 描述 | NPN Darlington Transistor 60V, 0.8A in E-Line package |
| 页数 / 页 | 3 / 2 — TYPICAL CHARACTERISTICS. VCE(sat) v IC. hFE v IC. VBE(sat) v IC. VBE(on) … |
| 文件格式/大小 | PDF / 93 Kb |
| 文件语言 | 英语 |
TYPICAL CHARACTERISTICS. VCE(sat) v IC. hFE v IC. VBE(sat) v IC. VBE(on) v IC. Maximum transient thermal impedance
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NPN SILICON PLANAR MEDIUM BCX38A/B/C POWER DARLINGTON TRANSISTORS BCX38A/B/C ISSUE 1 MARCH 94
TYPICAL CHARACTERISTICS
FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp IC/IB=100 VCE=5V * Ptot=1 Watt 1.0 1.6 +100°C 1.4 -55°C C 0.8 1.2 B olts) E (V 1.0 - +25°C +25°C ) t 0.6 0.8 a +100°C E-Line (s 0.6 CE TO92 Compatible V 0.4 - Normalised Gain +175°C 0.4 -55°C ABSOLUTE MAXIMUM RATINGS. FE h 0.2 PARAMETER SYMBOL VALUE UNIT 0.2 0 0.001 0.01 0.1 1 0.001 0.01 10 0.1 1 10 Collector-Base Voltage VCBO 80 V IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter Voltage VCEO 60 V
VCE(sat) v IC hFE v IC
Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 800 mA I V C/IB=100 CE=5V Power Dissipation at T 2.0 amb=25°C Ptot 1 W 2.0 Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C -55°C olts) 1.5 olts) -55°C 1.5 ELECTRICAL CHARACTERISTICS (at T - (V +25°C amb = 25°C). ) - (V t E B +25°C sa PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. ( +100°C 1.0 V BE 1.0 +100°C Collector-Base V V (BR)CBO 80 V IC=10µA, IE=0 +175°C Breakdown Voltage 0.5 +175°C 0.5 Collector-Emitter VCEO(sus) 60 V IC=10mA, IB=0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Sustaining Voltage IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base V(BR)EBO 10 V IE=10µA, IC=0
VBE(sat) v IC VBE(on) v IC
Breakdown Voltage Collector Cut-Off ICBO 100 nA VCB=60V, IE=0 Single Pulse Test at Tamb=25°C 10 Current D=1 (D.C.) 150 W Emitter Cut-Off IEBO 100 nA VEB=8V, IC=0 ps) °C/ m Current A t ( nce ( 100 n 1 Collector-Emitter VCE(sat) 1.25 V IC=800mA, IB=8mA* ta D=0.5 re Saturation Voltage esis r Cur Base-Emitter VBE(on) 1.8 V IC=800mA, VCE=5V* l R a 50 to c D.C. 1s Turn-on Voltage D=0.2 rm lle 0.1 100ms e 10ms h D=0.1 1.0ms Static BCX38A hFE 500 IC=100mA, VCE=5V* T D=0.05 - Co 0.1ms Single Pulse Forward 1000 I 0 C=500mA, VCE=5V* IC 0.0001 0.001 0.01 0.1 1 10 100 Current Pulse Width (seconds) 0.01 Transfer BCX38B 2000 IC=100mA, VCE=5V* 1 10 100 1000 Ratio 4000 IC=500mA, VCE=5V* VCE - Collector Voltage (Volts)
Maximum transient thermal impedance
BCX38C 5000 IC=100mA, VCE=5V* 10000 IC=500mA, VCE=5V*
Safe Operating Area
3-21 3-20
TYPICAL CHARACTERISTICS
FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp IC/IB=100 VCE=5V * Ptot=1 Watt 1.0 1.6 +100°C 1.4 -55°C C 0.8 1.2 B olts) E (V 1.0 - +25°C +25°C ) t 0.6 0.8 a +100°C E-Line (s 0.6 CE TO92 Compatible V 0.4 - Normalised Gain +175°C 0.4 -55°C ABSOLUTE MAXIMUM RATINGS. FE h 0.2 PARAMETER SYMBOL VALUE UNIT 0.2 0 0.001 0.01 0.1 1 0.001 0.01 10 0.1 1 10 Collector-Base Voltage VCBO 80 V IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter Voltage VCEO 60 V
VCE(sat) v IC hFE v IC
Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 800 mA I V C/IB=100 CE=5V Power Dissipation at T 2.0 amb=25°C Ptot 1 W 2.0 Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C -55°C olts) 1.5 olts) -55°C 1.5 ELECTRICAL CHARACTERISTICS (at T - (V +25°C amb = 25°C). ) - (V t E B +25°C sa PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. ( +100°C 1.0 V BE 1.0 +100°C Collector-Base V V (BR)CBO 80 V IC=10µA, IE=0 +175°C Breakdown Voltage 0.5 +175°C 0.5 Collector-Emitter VCEO(sus) 60 V IC=10mA, IB=0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Sustaining Voltage IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base V(BR)EBO 10 V IE=10µA, IC=0
VBE(sat) v IC VBE(on) v IC
Breakdown Voltage Collector Cut-Off ICBO 100 nA VCB=60V, IE=0 Single Pulse Test at Tamb=25°C 10 Current D=1 (D.C.) 150 W Emitter Cut-Off IEBO 100 nA VEB=8V, IC=0 ps) °C/ m Current A t ( nce ( 100 n 1 Collector-Emitter VCE(sat) 1.25 V IC=800mA, IB=8mA* ta D=0.5 re Saturation Voltage esis r Cur Base-Emitter VBE(on) 1.8 V IC=800mA, VCE=5V* l R a 50 to c D.C. 1s Turn-on Voltage D=0.2 rm lle 0.1 100ms e 10ms h D=0.1 1.0ms Static BCX38A hFE 500 IC=100mA, VCE=5V* T D=0.05 - Co 0.1ms Single Pulse Forward 1000 I 0 C=500mA, VCE=5V* IC 0.0001 0.001 0.01 0.1 1 10 100 Current Pulse Width (seconds) 0.01 Transfer BCX38B 2000 IC=100mA, VCE=5V* 1 10 100 1000 Ratio 4000 IC=500mA, VCE=5V* VCE - Collector Voltage (Volts)
Maximum transient thermal impedance
BCX38C 5000 IC=100mA, VCE=5V* 10000 IC=500mA, VCE=5V*
Safe Operating Area
3-21 3-20