Datasheet NV6257 (Navitas Semiconductor) - 3
| 制造商 | Navitas Semiconductor |
| 描述 | 650V Half-Bridge GaNFast Power IC |
| 页数 / 页 | 20 / 3 — NV6257. ESD Ratings. SYMBOL. PARAMETER. MAX. UNITS. Thermal Resistance. … |
| 文件格式/大小 | PDF / 734 Kb |
| 文件语言 | 英语 |
NV6257. ESD Ratings. SYMBOL. PARAMETER. MAX. UNITS. Thermal Resistance. TYP
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NV6257 ESD Ratings SYMBOL PARAMETER MAX UNITS
HBM Human Body Model (per JESD22-A114) 1000 V CDM Charged Device Model (per JESD22-C101F) 500 V
Thermal Resistance SYMBOL PARAMETER TYP UNITS
R (2) Junction-to-Case 1.8 ºC/W ɵJC R (2) Junction-to-Ambient 40 ºC/W ɵJA (2) Rɵ measured on DUT mounted on 1 square inch 2oz Cu (FR4 PCB) Revised 8-1-18 Navitas Semiconductor Confidential Page 3
NV6257 ESD Ratings SYMBOL PARAMETER MAX UNITS
HBM Human Body Model (per JESD22-A114) 1000 V CDM Charged Device Model (per JESD22-C101F) 500 V
Thermal Resistance SYMBOL PARAMETER TYP UNITS
R (2) Junction-to-Case 1.8 ºC/W ɵJC R (2) Junction-to-Ambient 40 ºC/W ɵJA (2) Rɵ measured on DUT mounted on 1 square inch 2oz Cu (FR4 PCB) Revised 8-1-18 Navitas Semiconductor Confidential Page 3