Datasheet ADG417 (Analog Devices) - 2
| 制造商 | Analog Devices |
| 描述 | LC2MOS Precision Mini-DIP Analog Switch |
| 页数 / 页 | 8 / 2 — ADG417–SPECIFICATIONS Dual Supply1 (VDD = +15 V. 10%, VSS = –15 V. 10%, … |
| 修订版 | A |
| 文件格式/大小 | PDF / 97 Kb |
| 文件语言 | 英语 |
ADG417–SPECIFICATIONS Dual Supply1 (VDD = +15 V. 10%, VSS = –15 V. 10%, VL = +5 V. 10%, GND = 0 V, unless otherwise noted)
该数据表的模型线
文件文字版本
ADG417–SPECIFICATIONS Dual Supply1 (VDD = +15 V
ⴞ
10%, VSS = –15 V
ⴞ
10%, VL = +5 V
ⴞ
10%, GND = 0 V, unless otherwise noted) B Version T Version –40
ⴗ
C to –55
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C to Parameter +25
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C +85
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C +25
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C +125
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C Units Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VSS to VDD VSS to VDD V RON 25 25 Ω typ VD = ± 12.5 V, IS = –10 mA 35 45 35 45 Ω max VDD = +13.5 V, VSS = –13.5 V LEAKAGE CURRENTS VDD = +16.5 V, VSS = –16.5 V Source OFF Leakage IS (OFF) ±0.1 ±0.1 nA typ VD = ± 15.5 V, VS = ⫿15.5 V; ±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2 Drain OFF Leakage ID (OFF) ±0.1 ±0.1 nA typ VD = ± 15.5 V, VS = ⫿15.5 V; ±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2 Channel ON Leakage ID, IS (ON) ±0.1 ±0.1 nA typ VS = VD = ± 15.5 V; ±0.4 ±5 ±0.4 ±30 nA max Test Circuit 3 DIGITAL INPUTS Input High Voltage, VINH 2.4 2.4 V min Input Low Voltage, VINL 0.8 0.8 V max Input Current I ± INL or IINH 0.005 ±0.005 µA typ VIN = VINL or VINH ±0.5 ±0.5 µA max DYNAMIC CHARACTERISTICS2 tON 100 100 ns typ RL = 300 Ω, CL = 35 pF; 160 200 145 200 ns max VS = ± 10 V; Test Circuit 4 tOFF 60 60 ns typ RL = 300 Ω, CL = 35 pF; 100 150 100 150 ns max VS = ± 10 V; Test Circuit 4 Charge Injection 7 7 pC typ VS = 0 V, RL = 0 Ω, CL = 10 nF; Test Circuit 5 OFF Isolation 80 80 dB typ RL = 50 Ω, f = 1 MHz; Test Circuit 6 CS (OFF) 6 6 pF typ CD (OFF) 6 6 pF typ CD, CS (ON) 55 55 pF typ POWER REQUIREMENTS VDD = +16.5 V, VSS = –16.5 V IDD 0.0001 0.0001 µA typ VIN = 0 V or 5 V 1 2.5 1 2.5 µA max ISS 0.0001 0.0001 µA typ 1 2.5 1 2.5 µA max IL 0.0001 0.0001 µA typ VL = +5.5 V 1 2.5 1 2.5 µA max NOTES 1Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. –2– REV. A
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10%, VSS = –15 V
ⴞ
10%, VL = +5 V
ⴞ
10%, GND = 0 V, unless otherwise noted) B Version T Version –40
ⴗ
C to –55
ⴗ
C to Parameter +25
ⴗ
C +85
ⴗ
C +25
ⴗ
C +125
ⴗ
C Units Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VSS to VDD VSS to VDD V RON 25 25 Ω typ VD = ± 12.5 V, IS = –10 mA 35 45 35 45 Ω max VDD = +13.5 V, VSS = –13.5 V LEAKAGE CURRENTS VDD = +16.5 V, VSS = –16.5 V Source OFF Leakage IS (OFF) ±0.1 ±0.1 nA typ VD = ± 15.5 V, VS = ⫿15.5 V; ±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2 Drain OFF Leakage ID (OFF) ±0.1 ±0.1 nA typ VD = ± 15.5 V, VS = ⫿15.5 V; ±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2 Channel ON Leakage ID, IS (ON) ±0.1 ±0.1 nA typ VS = VD = ± 15.5 V; ±0.4 ±5 ±0.4 ±30 nA max Test Circuit 3 DIGITAL INPUTS Input High Voltage, VINH 2.4 2.4 V min Input Low Voltage, VINL 0.8 0.8 V max Input Current I ± INL or IINH 0.005 ±0.005 µA typ VIN = VINL or VINH ±0.5 ±0.5 µA max DYNAMIC CHARACTERISTICS2 tON 100 100 ns typ RL = 300 Ω, CL = 35 pF; 160 200 145 200 ns max VS = ± 10 V; Test Circuit 4 tOFF 60 60 ns typ RL = 300 Ω, CL = 35 pF; 100 150 100 150 ns max VS = ± 10 V; Test Circuit 4 Charge Injection 7 7 pC typ VS = 0 V, RL = 0 Ω, CL = 10 nF; Test Circuit 5 OFF Isolation 80 80 dB typ RL = 50 Ω, f = 1 MHz; Test Circuit 6 CS (OFF) 6 6 pF typ CD (OFF) 6 6 pF typ CD, CS (ON) 55 55 pF typ POWER REQUIREMENTS VDD = +16.5 V, VSS = –16.5 V IDD 0.0001 0.0001 µA typ VIN = 0 V or 5 V 1 2.5 1 2.5 µA max ISS 0.0001 0.0001 µA typ 1 2.5 1 2.5 µA max IL 0.0001 0.0001 µA typ VL = +5.5 V 1 2.5 1 2.5 µA max NOTES 1Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. –2– REV. A