Datasheet ADG5408-EP, ADG5409-EP (Analog Devices) - 4

制造商Analog Devices
描述High Voltage Latch-Up Proof, 4-/8-Channel Multiplexers
页数 / 页18 / 4 — ADG5408-EP/ADG5409-EP. Enhanced Product. Parameter. 25°C. −40°C to +85°C. …
文件格式/大小PDF / 340 Kb
文件语言英语

ADG5408-EP/ADG5409-EP. Enhanced Product. Parameter. 25°C. −40°C to +85°C. −55°C to +125°C. Unit. Test Conditions/Comments

ADG5408-EP/ADG5409-EP Enhanced Product Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments

该数据表的模型线

文件文字版本

link to page 16 link to page 16 link to page 16 link to page 16 link to page 17 link to page 17 link to page 17 link to page 17 link to page 17 link to page 16 link to page 16 link to page 5
ADG5408-EP/ADG5409-EP Enhanced Product Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
CD (On), CS (On) ADG5408-EP 133 pF typ VS = 0 V, f = 1 MHz ADG5409-EP 81 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 45 μA typ Digital inputs = 0 V or VDD 55 80 μA max ISS 0.001 μA typ Digital inputs = 0 V or VDD 1 μA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2. Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 12.5 Ω typ VS = ±15 V, IS = −10 mA; see Figure 24 14 17 21 Ω max VDD = +18 V, VSS = −18 V On-Resistance Match Between 0.3 Ω typ VS = ±15 V, IS = −10 mA Channels, ∆RON 0.8 1.3 1.4 Ω max On-Resistance Flatness, RFLAT (ON) 2.3 Ω typ VS = ±15 V, IS = −10 mA 2.7 3.1 3.5 Ω max LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V Source Off Leakage, IS (Off ) ±0.1 nA typ VS = ±15 V, VD = 15 V; see Figure 27 ±0.25 ±1 ±7 nA max Drain Off Leakage, ID (Off ) ±0.15 nA typ VS = ±15 V, VD = 15 V; see Figure 27 ±0.4 ±4 ±30 nA max Channel On Leakage, ID (On), IS (On) ±0.15 nA typ VS = VD = ±15 V; see Figure 23 ±0.4 ±4 ±30 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 μA typ VIN = VGND or VDD ±0.1 μA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 160 ns typ RL = 300 Ω, CL = 35 pF 207 237 262 ns max VS = 10 V; see Figure 30 tON (EN) 140 ns typ RL = 300 Ω, CL = 35 pF 165 194 218 ns max VS = 10 V; see Figure 32 tOFF (EN) 133 ns typ RL = 300 Ω, CL = 35 pF 153 174 189 ns max VS = 10 V; see Figure 32 Break-Before-Make Time Delay, tD 38 ns typ RL = 300 Ω, CL = 35 pF 8 ns min VS1 = VS2 = 10 V; see Figure 31 Charge Injection, QINJ 155 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 33 Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 Channel-to-Channel Crosstalk −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 25 Rev. 0 | Page 4 of 18 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAMS GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ±15 V DUAL SUPPLY ±20 V DUAL SUPPLY 12 V SINGLE SUPPLY 36 V SINGLE SUPPLY CONTINUOUS CURRENT PER CHANNEL, Sx OR D ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE