Datasheet ADG5408, ADG5409 (Analog Devices) - 4

制造商Analog Devices
描述High Voltage Latch-Up Proof, 4-/8-Channel Multiplexers
页数 / 页24 / 4 — ADG5408/ADG5409. Data Sheet. Parameter. 25°C −40°C to +85°C −40°C to …
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ADG5408/ADG5409. Data Sheet. Parameter. 25°C −40°C to +85°C −40°C to +125°C Unit. Test Conditions/Comments. ±20 V DUAL SUPPLY

ADG5408/ADG5409 Data Sheet Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments ±20 V DUAL SUPPLY

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ADG5408/ADG5409 Data Sheet Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
CD (On), CS (On) ADG5408 133 pF typ VS = 0 V, f = 1 MHz ADG5409 81 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 45 µA typ Digital inputs = 0 V or VDD 55 70 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1 µA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 12.5 Ω typ VS = ±15 V, IS = −10 mA; see Figure 26 14 17 21 Ω max VDD = +18 V, VSS = −18 V On-Resistance Match Between 0.3 Ω typ VS = ±15 V, IS = −10 mA Channels, ∆RON 0.8 1.3 1.4 Ω max On-Resistance Flatness, RFLAT (ON) 2.3 Ω typ VS = ±15 V, IS = −10 mA 2.7 3.1 3.5 Ω max LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V Source Off Leakage, IS (Off) ±0.1 nA typ VS = ±15 V, VD =  15 V; see Figure 29 ±0.25 ±1 ±7 nA max Drain Off Leakage, ID (Off) ±0.15 nA typ VS = ±15 V, VD =  15 V; see Figure 29 ±0.4 ±4 ±30 nA max Channel On Leakage, ID (On), IS (On) ±0.15 nA typ VS = VD = ±15 V; see Figure 25 ±0.4 ±4 ±30 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 160 ns typ RL = 300 Ω, CL = 35 pF 207 237 262 ns max VS = 10 V; see Figure 32 tON (EN) 140 ns typ RL = 300 Ω, CL = 35 pF 165 194 218 ns max VS = 10 V; see Figure 34 tOFF (EN) 133 ns typ RL = 300 Ω, CL = 35 pF 153 174 189 ns max VS = 10 V; see Figure 34 Break-Before-Make Time Delay, tD 38 ns typ RL = 300 Ω, CL = 35 pF 11 ns min VS1 = VS2 = 10 V; see Figure 33 Charge Injection, QINJ 155 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 35 Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 28 Channel-to-Channel Crosstalk −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 Rev. C | Page 4 of 24 Document Outline Features Applications Functional Block Diagrams General Description Product Highlights Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx or D Absolute Maximum Ratings ESD Caution Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Terminology Trench Isolation Applications Information Outline Dimensions Ordering Guide