Datasheet CBRLDSH2-40 (Central Semiconductor)
| 制造商 | Central Semiconductor |
| 描述 | SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER |
| 页数 / 页 | 4 / 1 — CBRLDSH2-40. SURFACE MOUNT. w w w. c e n t r a l s e m i . c o m. HIGH … |
| 文件格式/大小 | PDF / 1.0 Mb |
| 文件语言 | 英语 |
CBRLDSH2-40. SURFACE MOUNT. w w w. c e n t r a l s e m i . c o m. HIGH DENSITY. DESCRIPTION:. 2 AMP SILICON
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CBRLDSH2-40 SURFACE MOUNT w w w. c e n t r a l s e m i . c o m HIGH DENSITY DESCRIPTION: 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRLDSH2-40 is a full wave Schottky bridge rectifier mounted in a low profile epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CL40 LPDIP CASE FEATURES: APPLICATIONS: •
Low leakage current (5.5μA TYP @ VRRM)
•
Input rectification
•
High 2.0A current rating
•
Polarity protection
•
Low VF Schottky diodes (480mV TYP @ IF=2.0A)
•
Steering diode array
•
Low profile package (1.6mm MAX)
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 40 V DC Blocking Voltage VR 40 V RMS Reverse Voltage VR(RMS) 28 V Average Forward Current (TL=50°C) IO 2.0 A Peak Forward Surge Current IFSM 50 A Operating Junction Temperature TJ -55 to +125 °C Storage Temperature Tstg -55 to +150 °C Thermal Resistance ΘJA 95 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=40V 5.5 100 μA IR VR=40V, TA=100°C 2.0 20 mA VF IF=2.0A 480 500 mV CJ VR=4.0V, f=1.0MHz 155 250 pF R1 (26-November 2012)
The CENTRAL SEMICONDUCTOR CBRLDSH2-40 is a full wave Schottky bridge rectifier mounted in a low profile epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CL40 LPDIP CASE FEATURES: APPLICATIONS: •
Low leakage current (5.5μA TYP @ VRRM)
•
Input rectification
•
High 2.0A current rating
•
Polarity protection
•
Low VF Schottky diodes (480mV TYP @ IF=2.0A)
•
Steering diode array
•
Low profile package (1.6mm MAX)
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 40 V DC Blocking Voltage VR 40 V RMS Reverse Voltage VR(RMS) 28 V Average Forward Current (TL=50°C) IO 2.0 A Peak Forward Surge Current IFSM 50 A Operating Junction Temperature TJ -55 to +125 °C Storage Temperature Tstg -55 to +150 °C Thermal Resistance ΘJA 95 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=40V 5.5 100 μA IR VR=40V, TA=100°C 2.0 20 mA VF IF=2.0A 480 500 mV CJ VR=4.0V, f=1.0MHz 155 250 pF R1 (26-November 2012)