Datasheet HMC635 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 -40 GHz |
| 页数 / 页 | 8 / 1 — HMC635. GaAs PHEMT MMIC DRIVER. AMPLIFIER, 18 - 40 GHz. Typical … |
| 文件格式/大小 | PDF / 410 Kb |
| 文件语言 | 英语 |
HMC635. GaAs PHEMT MMIC DRIVER. AMPLIFIER, 18 - 40 GHz. Typical Applications. Features. Functional Diagram. General Description
该数据表的模型线
文件文字版本
HMC635
v00.1107
GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Typical Applications Features
2 The HMC635 is ideal for: Gain: 19.5 dB • Point-to-Point Radios P1dB: +23 dBm • Point-to-Multi-Point Radios & VSAT Output IP3: +29 dBm IP • LO Driver for Mixers Saturated Power: +24 dBm @ 15% PAE H • Military & Space Supply Voltage: +5V @ 280 mA 50 Ohm Matched Input/Output - C S Die Size: 1.95 x 0.84 x 0.10 mm R
Functional Diagram General Description
IE The HMC635 is a GaAs PHEMT MMIC Driver IF L Amplifi er die which operates between 18 and 40 GHz. P The amplifi er provides 19.5 dB of gain, +29 dBm M Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifi er for microwave radio K A applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635 is capable of OC providing up to +24 dBm of saturated output power at 15% PAE. The amplifi er’s I/Os are DC blocked and BL internally matched to 50 Ohms making it ideal for IN integration into Multi-Chip-Modules (MCMs). All data A is taken with die connected at input and output RF ports via two 1 mil wedge bonds of 500μm length. & G R E IV R
Electrical Specifi cations, T = +25° C, Vdd1, 2, 3, 4 = +5V, Idd= 280mA
[1]
A
D Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 18 - 36 36 - 40 GHz Gain 16 19.5 16 19 dB Gain Variation Over Temperature 0.045 0.060 0.045 0.050 dB/ °C Input Return Loss 15 9 dB Output Return Loss 13 12 dB Output Power for 1 dB Compression (P1dB) 19 23 14 19 dBm Saturated Output Power (Psat) 24 20 dBm Output Third Order Intercept (IP3) 24 29 21 27 dBm Noise Figure 8 7 dB Supply Current (Idd1 + Idd2 + Idd3 + Idd4) 280 280 mA [1]Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical. Information furnis F he o d r pri by An ce, de alog Devic leiv s ies ry be , a lievend to pla d to be accurce o ate an rd der relia s bl , pl e. Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
2 - 58
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Pho - n 25 e: 7 0- 81 33 2 4 9- 3 F 470 ax: 978 0 • Order o - n25 lin 0- e a 3 t 373 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hit A tpite.co plicatio m n Support: Phone: 1-800-ANALOG-D
v00.1107
GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz Typical Applications Features
2 The HMC635 is ideal for: Gain: 19.5 dB • Point-to-Point Radios P1dB: +23 dBm • Point-to-Multi-Point Radios & VSAT Output IP3: +29 dBm IP • LO Driver for Mixers Saturated Power: +24 dBm @ 15% PAE H • Military & Space Supply Voltage: +5V @ 280 mA 50 Ohm Matched Input/Output - C S Die Size: 1.95 x 0.84 x 0.10 mm R
Functional Diagram General Description
IE The HMC635 is a GaAs PHEMT MMIC Driver IF L Amplifi er die which operates between 18 and 40 GHz. P The amplifi er provides 19.5 dB of gain, +29 dBm M Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifi er for microwave radio K A applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635 is capable of OC providing up to +24 dBm of saturated output power at 15% PAE. The amplifi er’s I/Os are DC blocked and BL internally matched to 50 Ohms making it ideal for IN integration into Multi-Chip-Modules (MCMs). All data A is taken with die connected at input and output RF ports via two 1 mil wedge bonds of 500μm length. & G R E IV R
Electrical Specifi cations, T = +25° C, Vdd1, 2, 3, 4 = +5V, Idd= 280mA
[1]
A
D Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 18 - 36 36 - 40 GHz Gain 16 19.5 16 19 dB Gain Variation Over Temperature 0.045 0.060 0.045 0.050 dB/ °C Input Return Loss 15 9 dB Output Return Loss 13 12 dB Output Power for 1 dB Compression (P1dB) 19 23 14 19 dBm Saturated Output Power (Psat) 24 20 dBm Output Third Order Intercept (IP3) 24 29 21 27 dBm Noise Figure 8 7 dB Supply Current (Idd1 + Idd2 + Idd3 + Idd4) 280 280 mA [1]Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical. Information furnis F he o d r pri by An ce, de alog Devic leiv s ies ry be , a lievend to pla d to be accurce o ate an rd der relia s bl , pl e. Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
2 - 58
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Pho - n 25 e: 7 0- 81 33 2 4 9- 3 F 470 ax: 978 0 • Order o - n25 lin 0- e a 3 t 373 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hit A tpite.co plicatio m n Support: Phone: 1-800-ANALOG-D