Datasheet FDC6561AN - Fairchild MOSFET, DUAL, NN, SUPERSOT-6 — 数据表

Fairchild FDC6561AN

Part Number: FDC6561AN

详细说明

Manufacturer: Fairchild

Description: MOSFET, DUAL, NN, SUPERSOT-6

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Docket:
April 1999
FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET
General Description Features
2.5 A, 30 V.

RDS(ON) = 0.095 @ VGS = 10 V RDS(ON) = 0.145 @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.

Specifications:

  • Continuous Drain Current Id: 2.5 A
  • Current Id Max: 2.5 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 30 V
  • Full Power Rating Temperature: 25°C
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 6
  • Number of Transistors: 2
  • On Resistance Rds(on): 95 MOhm
  • Package / Case: SuperSOT-6
  • Power Dissipation Pd: 960 mW
  • Pulse Current Idm: 10 A
  • Rds(on) Test Voltage Vgs: 10 V
  • SMD Marking: FDC6561AN
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 1.8 V
  • Transistor Case Style: SuperSOT
  • Transistor Polarity: N Channel
  • Uni / Bi Directional Polarity: NN
  • Voltage Vds Typ: 30 V
  • Voltage Vds: 30 V
  • Voltage Vgs Max: 1.8 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 3 V

RoHS: Yes