Datasheet SIR892DP-T1-E3 - Vishay MOSFET, N, SO-8 — 数据表
Part Number: SIR892DP-T1-E3
详细说明
Manufacturer: Vishay
Description: MOSFET, N, SO-8
Docket:
New Product
SiR892DP
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
Specifications:
- Continuous Drain Current Id: 50 A
- Current Id Max: 30 A
- Drain Source Voltage Vds: 25 V
- Junction Temperature Tj Max: 150°C
- Mounting Type: SMD
- Number of Pins: 8
- On Resistance Rds(on): 3.2 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: PowerPAK
- Power Dissipation Pd: 50 W
- Rds(on) Test Voltage Vgs: 10 V
- Rise Time: 18 ns
- Transistor Case Style: PowerPAK SO
- Transistor Polarity: N Channel
- Voltage Vds Typ: 25 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 2.6 V
- Voltage Vgs th Min: 1 V
RoHS: Yes
Accessories:
- Panasonic - EYGA091203SM
- Panasonic - EYGA121807A
其他名称:
SIR892DPT1E3, SIR892DP T1 E3