Datasheet Texas Instruments CSD16340Q3 — 数据表

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SLPS247E – DECEMBER 2009 – REVISED AUGUST 2014 CSD16340Q3 25-V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Optimized for 5 V Gate Drive
Resistance Rated at VGS =2.5 V
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3-mm × 3.3-mm Plastic Package TA = 25°C 25 V Qg Gate Charge Total (4.5 V) 6.5 nC Qgd Gate Charge Gate-to-Drain RDS(on) 8 D S 2 7 D 4 VGS = 4.5 V 4.3 mΩ VGS = 8 V 3.8 mΩ Threshold Voltage 0.85 Device Media Qty Package Ship CSD16340Q3 13-Inch Reel 2500 CSD16340Q3T 7-Inch Reel 250 SON 3.3 x 3.3 mm
Plastic Package Tape and
Reel VALUE UNIT VDS Drain-to-Source Voltage 25 V VGS Gate-to-Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 60 A Continuous Drain Current(1) 21 A IDM Pulsed Drain Current, TA = 25°C(2) 115 A PD Power Dissipation(1) 3 W TJ,
Tstg Operating Junction and
Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse
ID = 40 A, L = 0.1 mH, RG = 25 Ω 80 mJ ID (1) Typical RθJA = 39°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4
PCB.
(2) Pulse width ≤300 Ојs, duty cycle ≤2% D 6 V Absolute Maximum Ratings Top View G mΩ (1) For all available packages, see the orderable addendum at …