Datasheet IXKC20N60C - IXYS MOSFET, N, ISOPLUS220 — 数据表

IXYS IXKC20N60C

Part Number: IXKC20N60C

详细说明

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS220

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Docket:
CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package
Electrically Isolated Back Surface
N-Channel Enhancement Mode Low RDS(on), Superjunction MOSFET Preliminary Data Sheet
VDSS = 600 V ID25 = 14 A RDS(on) = 190 m
Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR PD TJ TJM Tstg TL VISOL FC Weight

Specifications:

  • Capacitance Ciss Typ: 3000 pF
  • Continuous Drain Current Id: 14 A
  • Drain Source Voltage Vds: 600 V
  • Isolation Voltage: 2.5 kV
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 79nC
  • On State Resistance: 190 MOhm
  • Package / Case: ISOPLUS-220
  • Power Dissipation Pd: 125 W
  • Reverse Recovery Time trr Max: 610 ns
  • Rth: 1
  • Threshold Voltage Vgs Typ: 3.9 V
  • Transistor Case Style: ISOPLUS-220
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 600 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes