Datasheet NTE66 - NTE Electronics N CHANNEL MOSFET, 100 V, 14 A, TO-220 — 数据表

详细说明

Manufacturer: NTE Electronics

Description: N CHANNEL MOSFET, 100 V, 14 A, TO-220

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Docket:
NTE66 MOSFET N­Ch, Enhancement Mode High Speed Switch
Description: The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximum Ratings: Drain­Source Voltage (TJ = +25°C to +150°C), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain­Gate Voltage (RGS = 1M, TJ = +25°C to +125°C), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . 100V Gate­Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Continuous Drain Current, ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Continuous Drain Current Id: 14 A
• Drain Source Voltage Vds: 100 V
• On Resistance Rds(on): 160 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 273-AB