2N4033
General Purpose Transistor
Amplifiers/Switches Features:
• PNP Silicon Planar RF Transistor.
• Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E -0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 -L 42° 48°
Dimensions : Millimetres Pin Configuration
1. Emitter
2. Base
3. Collector Page 1 31/05/05 V1.0 2N4033
General Purpose Transistor
Absolute Maximum Ratings (Ta = 25°C unless specified otherwise)
Parameter Symbol Rating Units Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO 5 ICM 1 A 800
4.6 mW
mW/°C 4
22.85 W
mW/°C -65 to +200 °C Collector Current 80 Power Dissipation at Ta = 25°C
Derate above 25°C
Power Dissipation at Tc = 25°C
Derate above 25°C PD Operating and Storage Junction
Temperature Range Tj, Tstg V Electrical Characteristics (Ta = 25°C unless specified otherwise)
Parameter Symbol Test Condition Collector Emitter Breakdown Voltage BVCEO* IC = 10mA, IB = 0 Collector Base Breakdown Voltage BVCBO IC = 10µA, IE = 0 Emitter Base Breakdown Voltage BVEBO IE = 10µA, IC = 0 5 -Collector Leakage Current ICBO VCB = 60V, IE = 0
VCB = 60V, TA = 150ºC -50
50 nA …
