Datasheet Inchange Semiconductor 2SB772 — 数据表
| 制造商 | Inchange Semiconductor |
| 系列 | 2SB772 |
| 零件号 | 2SB772 |
TO-126封装的硅PNP功率晶体管
数据表
Silicon PNP Power Transistors in TO-126 package
Inchange Semiconductor Product Specification 2SB772 Silicon PNP Power Transistors ・ DESCRIPTION
・With TO-126 package
・Complement to type 2SD882
APPLICATIONS
・Suited for the output stage of 3 watts
audio amplifier ,voltage regulator ,DCDC converter and relay driver
PINNING
PIN DESCRIPTION 1 Emitter 2 Collector;connected to
mounting base 3 Base Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -3 A ICM Collector current-Peak -7 A PD Total power dissipation Ta=25℃ 1.0 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB772 Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.3 -0.5 V VBEsat Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A -1.0 -2.0 V ICBO Collector cut-off current VCB=-30V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 μA hFE-1 DC current gain IC=-20mA ; VCE=-2V 30 hFE-2 DC current gain IC=-1A ; VCE=-2V 60 Transition frequency IC=-0.1A ; VCE=-5V 80 MHz Collector output capacitance IE=0; f=1MHz ; VCB=-10V 55 pF fT
COB CONDITIONS hFE-2 Classifications
R Q P E 60-120 100-200 160-320 200-400 2 MIN TYP. MAX -30 UNIT
V 400 Inchange Semiconductor Product Specification 2SB772 Silicon PNP Power Transistors
PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SB772 Silicon PNP Power Transistors 4 Inchange Semiconductor Product Specification 2SB772 Silicon PNP Power Transistors 5 …