Datasheet Infineon IRGPS60B120KDP — 数据表

PD-95913 IRGPS60B120KDP
INSULATED GATE BIPOLAR TRANSISTOR WITH
Motor Control Co-Pack IGBT
ULTRAFAST SOFT RECOVERY DIODE
C Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
• Lead-Free VCES = 1200V
VCE(on) typ. = 2.50V G @ VGE = 15V,
E ICE = 60A, Tj=25°C N-channel Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation. Super-247™ Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C …