Datasheet STMicroelectronics BUZ171 — 数据表

BUZ 171 SIPMOS ® Power Transistor • P channel
• Enhancement mode
• Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 171 -50 V -8 A 0.3 Ω TO-220 AB C67078-S1450-A2 Maximum Ratings
Parameter Symbol Continuous drain current ID TC = 30 °C Values Unit
A -8 IDpuls Pulsed drain current TC = 25 °C -32 EAS Avalanche energy, single pulse mJ ID = -8 A, VDD = -25 V, RGS = 25 Ω
L = 1.1 mH, Tj = 25 °C 70 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V
W 40 Operating temperature Tj -55 . + 150 Storage temperature Tstg -55 . + 150 Thermal resistance, chip case RthJC ≤ 3.1 Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 150 / 56 1 07/96 BUZ 171 Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values
min. typ. Unit
max. Static Characteristics
Drain-source breakdown voltage V(BR)DSS VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
Gate threshold voltage -50 -2.1 -3 -4 VGS(th) VGS=VDS, ID = 1 mA
Zero gate voltage drain current V IDSS µA VDS = -50 V, VGS = 0 V, Tj = 25 °C -0.1 -1 VDS = -50 V, VGS = 0 V, Tj = 125 °C -10 -100 Gate-source leakage current IGSS VGS = -20 V, VDS = 0 V
Drain-Source on-resistance -10 -100
Ω RDS(on) VGS = -10 V, ID = -5 A Semiconductor Group nA -2 0.25 0.3 07/96 BUZ 171 Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values
min. typ. Unit
max. Dynamic Characteristics
Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = -5 A
Input capacitance 1.5 pF
-750 1000 -270 400 -120 180 Crss VGS = 0 V, VDS = -25 V, f = 1 MHz
Turn-on delay time -Coss VGS = 0 V, VDS = -25 V, f = 1 MHz
Reverse transfer capacitance 2.3 Ciss VGS = 0 V, VDS = -25 V, f = 1 MHz …