Datasheet Analog Devices HMC453QS16GETR — 数据表

HMC453QS16G / 453QS16GE
v01.0205 11 InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 -2.2 GHz Typical Applications Features The HMC453QS16G / HMC453QS16GE is ideal for
applications requiring a high dynamic range amplifier: Output IP3: +51 dBm • GSM, GPRS & EDGE 8 dB Gain @ 2100 MHz • CDMA & W-CDMA 45% PAE @ +32 dBm Pout • CATV/Cable Modem +25 dBm CDMA2000 Channel Power@ -45 dBc ACP • Fixed Wireless & WLL Single +5V Supply 21.5 dB Gain @ 400 MHz LINEAR & POWER AMPLIFIERS -SMT Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm2 General Description Functional Diagram The HMC453QS16G & HMC453QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifiers
operating between 0.4 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB
at 2.1 GHz. Utilizing a minimum number of external
components and a single +5V supply, the amplifier
output IP3 can be optimized to +47 dBm at 0.4 GHz
or +51 dBm at 2.1 GHz. The power control (VPD)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE
make the HMC453QS16G(E) ideal power amplifiers
for Cellular/PCS/3G, WLL, ISM and Fixed Wireless
applications. Electrical Specifi cations, TA = +25°C, Vs= +5V, VPD = +5V [1]
Parameter Min. Frequency Range
Gain Typ. Max. Min. 400 -410
19 Gain Variation Over
Temperature 21.5
0.012 Typ. Max. Min. 450 -496
18 …