Datasheet Analog Devices HMC-ALH310-DIE — 数据表

HMC-ALH310
v02.0209 LOW NOISE AMPLIFIERS -CHIP 1 GaAs HEMT LOW NOISE
AMPLIFIER, 37 -42 GHz Typical Applications Features This HMC-ALH310 is ideal for: Noise Figure: 3.5 dB • Point-to-Point Radios P1dB: +12 dBm • Point-to-Multi-Point Radios Gain: 22 dB • Military & Space Supply Voltage: +2.5V
50 Ohm Matched Input/Output
Die Size: 1.80 x 0.73 x 0.1 mm General Description Functional Diagram The HMC-ALH310 is a three stage GaAs HEMT MMIC
Low Noise Amplifier (LNA) which operates between
37 and 42 GHz. The HMC-ALH310 features 22 dB of
small signal gain, 3.5 dB of noise figure and an output
power of +12 dBm at 1dB compression from a +2.5V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. This versatile LNA
is compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd = 2.5V, Idd = 52 mA*
Parameter Min. Frequency Range
Gain 4 Units
GHz 22
3.5 Input Return Loss Max. 37 -42
20 Noise Figure Typ. dB …