Datasheet Analog Devices HMC903-Die — 数据表

6 GHz to 18 GHz GaAs, pHEMT, MMIC,
Low Noise Amplifier
HMC903 Data Sheet
FEATURES GENERAL DESCRIPTION Noise figure: 1.6 dB typical
Small signal gain: 19 dB typical
Output P1dB: 16 dBm typical
Single-supply voltage: 3.5 V at 90 mA typical
Output IP3: 27 dBm typical
50 Ω matched input/output
Self biased with optional bias control for quiescent drain
control (IDQ) reduction with no radio frequency (RF) applied
Die size: 1.33 mm × 1.08 mm × 0.102 mm The HMC903 is a gallium arsenide (GaAs), pseudomorphic high
electron mobility transistor (pHEMT), monolithic microwave
integrated circuit (MMIC), low noise amplifier (LNA), which is
self biased with the optional bias control for IDQ reduction. The
device operates between 6 GHz and 18 GHz. This LNA provides
19 dB of small signal gain, 1.6 dB noise figure, and an output
third-order intercept (IP3) of 27 dBm, requiring only 90 mA of
supply current from a 3.5 V supply. The output power for a 1 dB
compression (P1dB) of 16 dBm enables the LNA to function as
a local oscillator (LO) driver for balanced, I/Q, or image rejection
mixers. The HMC903 also features inputs/outputs that are dc
blocked and internally matched to 50 Ω for ease of integration …