Datasheet Analog Devices HMC8402-DIE — 数据表

2 GHz to 30 GHz, GaAs, pHEMT, MMIC,
Low Noise Amplifier
HMC8402 Data Sheet
FEATURES GENERAL DESCRIPTION Output power for 1 dB compression (P1dB): 21.5 dBm typical
Saturated output power (PSAT): 22 dBm typical
Gain: 13.5 dB typical
Noise figure: 2 dB
Output third order intercept (IP3): 26 dBm typical
Supply voltage: 7 V at 68 mA
50 Ω matched input/output
Die size: 2.7 mm × 1.363 mm × 0.05 mm The HMC8402 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT), monolithic microwave
integrated circuit (MMIC), low noise amplifier which operates
between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of
gain, 2 dB noise figure, 26 dBm output IP3, and 21.5 dBm of
output power at 1 dB gain compression while requiring 68 mA
from a 7 V supply. The HMC8402 is self biased with only a single
positive supply needed to achieve a drain current IDQ of 68 mA. APPLICATIONS The HMC8402 amplifier input/outputs are internally matched to
50 Ω facilitating integration into multichip modules (MCMs). All
data is taken with the chip connected via two 0.025 mm (1 mil)
wire bonds of minimal length 0.31 mm (12 mils). Test instrumentation
Microwave radios and very small aperture terminals (VSATs)
Military and space …