Datasheet Infineon 2ED21091S06F — 数据表

2ED21091S06F
2ED21091S06F 650 V half bridge gate driver with integrated bootstrap diode
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• VS_OFFSET = 650 V max.
Io+pk / Io-pk (typ.) = + 0.29 A/ -0.7 A
VCC = 10 V to 20 V
Internal deadtime = 540 ns typ.
tON / tOFF (typ.) = 740 ns/ 200 ns •
• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
Negative VS transient immunity of 100 V
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V …