Datasheet STMicroelectronics STWA88N65M5 — 数据表

STW88N65M5
STWA88N65M5
N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh™ V
Power MOSFETs in TO-247 and TO-247 long leads packages
Datasheet -production data Features
Order codes VDSS
@Tjmax. RDS(on) max. ID 710 V 0.029 Ω 84 A STW88N65M5
STWA88N65M5
2 3 • Worldwide best RDS(on) in TO-247 1 • Higher VDSS rating TO-247
TO-247 long leads • Higher dv/dt capability
• Excellent switching performance
• Easy to drive Figure 1. Internal schematic diagram • 100% avalanche tested Applications ' • High efficiency switching applications:
– Servers
– PV inverters
– Telecom infrastructure
– Multi kW battery chargers * Description 6 $0Y These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency. Table 1. Device summary …