Datasheet New Jersey Semiconductor 2N4360 — 数据表
| 制造商 | New Jersey Semiconductor |
| 系列 | 2N4360 |
| 零件号 | 2N4360 |
跨MOSFET P-CH Si 20V
价格
参数化
| Category | Power MOSFET |
| Channel Type | P |
| Configuration | Single |
| Material | Si |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -20 V |
| Maximum Power Dissipation | 200 mW |
| Number of Elements per Chip | 1 |
| Operating Temperature Max | 125 °C |
| Operating Temperature Min | -55 °C |
制造商分类
- MOSFET