Datasheet Vishay VEMD5510CF — 数据表

VEMD5510CF
www.vishay.com Vishay Semiconductors Silicon PIN Photodiode
FEATURES Package type: surface-mount Package form: top view Dimensions (L x W x H in mm): 5 x 4 x 0.9 Radiant sensitive area (in mm2): 7.5 Supression filter for infrared radiation Fast response times Angle of half sensitivity: П• = В± 65В° Floor life: 72 h, MSL 4, according to J-STD-020 Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912 DESCRIPTION
VEMD5510CF is a high speed and high sensitive PIN
photodiode. It is a low profile surface-mount device (SMD)
including the chip with a 7.5 mm2 sensitive area detecting
visible light much like the human eye. The diode has its
peak sensitivity at 540 nm and a low capacitance. APPLICATIONS Wearables Optical heart rate monitoring Ambient light sensors PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm) VEMD5510CF 0.25 ± 65 440 to 620 PACKAGE FORM Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS VEMD5510CF Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view VEMD5510CF-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 В°C, unless otherwise specified)
PARAMETER TEST CONDITION Reverse voltage
Power dissipation Tamb ≤ 25 °C Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature According to reflow solder profile Fig. 8 Thermal resistance junction-to-ambient
ESD safety HBM Rev. 1.0, 14-Sep-17 ± 2000 V, 1.5 kΩ, 100 pF, 3 pulses SYMBOL VALUE UNIT VR 20 V PV 215 mW Tj 110 °C Tamb -40 to +100 °C Tstg -40 to +100 °C Tsd 260 °C RthJA 350 K/W ESDHBM ≥2 kV Document Number: 84387
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For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5510CF
www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 В°C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 50 mA VF -0.9 1.3 V IR = 100 ОјA, E = 0 V(BR) 20 -V VR = 10 V, E = 0 Iro -0.2 10 nA VR = 0 V, f = 1 MHz, E = 0 CD -80 -pF Forward voltage …