Datasheet Texas Instruments TLE2161 — 数据表

制造商	Texas Instruments
系列	TLE2161

JFET输入高输出驱动低功率失补偿运算放大器

数据表

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PDF, 1.0 Mb, 修订版: D, 档案已发布: May 1, 1996

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价格

状态

	TLE2161CD	TLE2161CDG4	TLE2161CP	TLE2161ID	TLE2161IDG4	TLE2161IDR	TLE2161IDRG4	TLE2161IP
Lifecycle Status	Active (Recommended for new designs)	Active (Recommended for new designs)	Obsolete (Manufacturer has discontinued the production of the device)	Active (Recommended for new designs)	Active (Recommended for new designs)	Active (Recommended for new designs)	Active (Recommended for new designs)	Obsolete (Manufacturer has discontinued the production of the device)
Manufacture's Sample Availability	No	No	Yes	No	Yes	No	No	No

打包

	TLE2161CD	TLE2161CDG4	TLE2161CP	TLE2161ID	TLE2161IDG4	TLE2161IDR	TLE2161IDRG4	TLE2161IP
N	1	2	3	4	5	6	7	8
Pin	8	8	8	8	8	8	8	8
Package Type	D	D	P	D	D	D	D	P
Industry STD Term	SOIC	SOIC	PDIP	SOIC	SOIC	SOIC	SOIC	PDIP
JEDEC Code	R-PDSO-G	R-PDSO-G	R-PDIP-T	R-PDSO-G	R-PDSO-G	R-PDSO-G	R-PDSO-G	R-PDIP-T
Package QTY	75	75		75	75	2500	2500
Carrier	TUBE	TUBE		TUBE	TUBE	LARGE T&R	LARGE T&R
Device Marking	2161C	2161C		2161I	2161I	2161I	2161I
Width (mm)	3.91	3.91	6.35	3.91	3.91	3.91	3.91	6.35
Length (mm)	4.9	4.9	9.81	4.9	4.9	4.9	4.9	9.81
Thickness (mm)	1.58	1.58	3.9	1.58	1.58	1.58	1.58	3.9
Pitch (mm)	1.27	1.27	2.54	1.27	1.27	1.27	1.27	2.54
Max Height (mm)	1.75	1.75	5.08	1.75	1.75	1.75	1.75	5.08
Mechanical Data	下载	下载	下载	下载	下载	下载	下载	下载

参数化

Parameters / Models	TLE2161CD	TLE2161CDG4	TLE2161CP	TLE2161ID	TLE2161IDG4	TLE2161IDR	TLE2161IDRG4	TLE2161IP
Additional Features	Decompensated	Decompensated	Decompensated Vos Adj Pin	Decompensated	Decompensated	Decompensated	Decompensated	Decompensated Vos Adj Pin
Approx. Price (US$)			0.74 \| 1ku					0.74 \| 1ku
Architecture	FET	FET	FET	FET	FET	FET	FET	FET
CMRR(Min), dB	72	72		72	72	72	72
CMRR(Min)(dB)			72					72
CMRR(Typ), dB	90	90		90	90	90	90
CMRR(Typ)(dB)			90					90
GBW(Typ), MHz	6.4	6.4		6.4	6.4	6.4	6.4
GBW(Typ)(MHz)			6.4					6.4
Input Bias Current(Max), pA	60	60		60	60	60	60
Input Bias Current(Max)(pA)			60					60
Iq per channel(Max), mA	0.35	0.35		0.35	0.35	0.35	0.35
Iq per channel(Max)(mA)			0.35					0.35
Iq per channel(Typ), mA	0.29	0.29		0.29	0.29	0.29	0.29
Iq per channel(Typ)(mA)			0.29					0.29
Number of Channels	1	1		1	1	1	1
Number of Channels(#)			1					1
Offset Drift(Typ), uV/C	6	6		6	6	6	6
Offset Drift(Typ)(uV/C)			6					6
Operating Temperature Range, C	0 to 70	0 to 70		0 to 70	0 to 70	0 to 70	0 to 70
Operating Temperature Range(C)			0 to 70					0 to 70
Output Current(Typ), mA	50	50		50	50	50	50
Output Current(Typ)(mA)			50					50
Package Group	SOIC	SOIC	SOIC	SOIC	SOIC	SOIC	SOIC	SOIC
Package Size: mm2:W x L, PKG	8SOIC: 29 mm2: 6 x 4.9(SOIC)	8SOIC: 29 mm2: 6 x 4.9(SOIC)		8SOIC: 29 mm2: 6 x 4.9(SOIC)	8SOIC: 29 mm2: 6 x 4.9(SOIC)	8SOIC: 29 mm2: 6 x 4.9(SOIC)	8SOIC: 29 mm2: 6 x 4.9(SOIC)
Package Size: mm2:W x L (PKG)			See datasheet (PDIP)					See datasheet (PDIP)
Rail-to-Rail	In to V+	In to V+	In to V+	In to V+	In to V+	In to V+	In to V+	In to V+
Rating	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog
Slew Rate(Typ), V/us	10	10		10	10	10	10
Slew Rate(Typ)(V/us)			10					10
Total Supply Voltage(Max), +5V=5, +/-5V=10	36	36		36	36	36	36
Total Supply Voltage(Max)(+5V=5, +/-5V=10)			36					36
Total Supply Voltage(Min), +5V=5, +/-5V=10	7	7		7	7	7	7
Total Supply Voltage(Min)(+5V=5, +/-5V=10)			7					7
Vn at 1kHz(Typ), nV/rtHz	40	40		40	40	40	40
Vn at 1kHz(Typ)(nV/rtHz)			40					40
Vos (Offset Voltage @ 25C)(Max), mV	3	3		3	3	3	3
Vos (Offset Voltage @ 25C)(Max)(mV)			3					3

生态计划

	TLE2161CD	TLE2161CDG4	TLE2161CP	TLE2161ID	TLE2161IDG4	TLE2161IDR	TLE2161IDRG4	TLE2161IP
RoHS	Compliant	Compliant	Not Compliant	Compliant	Compliant	Compliant	Compliant	Not Compliant
Pb Free	No	No

应用须知

下载
TLE2161 EMI Immunity Performance
PDF, 90 Kb, 档案已发布: Dec 31, 2013

模型线

系列: TLE2161 (8)

TLE2161CD TLE2161CDG4 TLE2161CP TLE2161ID TLE2161IDG4 TLE2161IDR TLE2161IDRG4 TLE2161IP

制造商分类

Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> Precision Op Amps