Datasheet Texas Instruments LT1014D-EP — 数据表
| 制造商 | Texas Instruments |
| 系列 | LT1014D-EP |
增强型产品四路精密运算放大器
数据表
状态
| LT1014DMDWREP | V62/09614-01XE | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | No |
打包
| LT1014DMDWREP | V62/09614-01XE | |
|---|---|---|
| N | 1 | 2 |
| Pin | 16 | 16 |
| Package Type | DW | DW |
| Industry STD Term | SOIC | SOIC |
| JEDEC Code | R-PDSO-G | R-PDSO-G |
| Package QTY | 2000 | 2000 |
| Carrier | LARGE T&R | LARGE T&R |
| Device Marking | LT1014DMEP | LT1014DMEP |
| Width (mm) | 7.5 | 7.5 |
| Length (mm) | 10.3 | 10.3 |
| Thickness (mm) | 2.35 | 2.35 |
| Pitch (mm) | 1.27 | 1.27 |
| Max Height (mm) | 2.65 | 2.65 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | LT1014DMDWREP | V62/09614-01XE |
|---|---|---|
| Additional Features | N/A | N/A |
| Architecture | Bipolar | Bipolar |
| CMRR(Min), dB | 97 | 97 |
| CMRR(Typ), dB | 117 | 117 |
| GBW(Typ), MHz | 0.7 | 0.7 |
| IIB(Max), pA | 50000 | 50000 |
| Iq per channel(Max), mA | 0.5 | 0.5 |
| Iq per channel(Typ), mA | 0.3 | 0.3 |
| Number of Channels | 4 | 4 |
| Offset Drift(Typ), uV/C | 0.5 | 0.5 |
| Operating Temperature Range, C | -55 to 125 | -55 to 125 |
| Output Current(Typ), mA | 25 | 25 |
| Package Group | SOIC | SOIC |
| Package Size: mm2:W x L, PKG | 16SOIC: 106 mm2: 10.3 x 10.3(SOIC) | 16SOIC: 106 mm2: 10.3 x 10.3(SOIC) |
| Rail-to-Rail | In to V- | In to V- |
| Rating | HiRel Enhanced Product | HiRel Enhanced Product |
| Slew Rate(Typ), V/us | 0.4 | 0.4 |
| Total Supply Voltage(Max), +5V=5, +/-5V=10 | 44 | 44 |
| Total Supply Voltage(Min), +5V=5, +/-5V=10 | 5 | 5 |
| Vn at 1kHz(Typ), nV/rtHz | 22 | 22 |
| Vos (Offset Voltage @ 25C)(Max), mV | 0.45 | 0.45 |
生态计划
| LT1014DMDWREP | V62/09614-01XE | |
|---|---|---|
| RoHS | Compliant | Compliant |
模型线
系列: LT1014D-EP (2)
制造商分类
- Semiconductors> Space & High Reliability> Amplifier> Operational Amplifiers