Datasheet Texas Instruments CSD88539ND — 数据表

CSD88539ND
SLPS456 – FEBRUARY 2014 CSD88539ND, Dual 60 V N-Channel NexFET™ Power MOSFETs
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Avalanche Rated
Pb Free
RoHS Compliant
Halogen Free TA = 25В°C 2 Applications TYPICAL VALUE Drain-to-Source Voltage 60 V Qg Gate Charge Total (10 V) 7.2 nC Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage Half Bridge for Motor Control
Synchronous Buck Converter 1.1 This dual SO-8, 60 V, 23 mО© NexFETв„ў power
MOSFET is designed to serve as a half bridge in lowcurrent motor control applications. 27 mΩ VGS = 10 V 23 mΩ 3.0 Top View 8 2 G1 7 3 S2 6 4 G2 V Device Qty Media Package Ship CSD88539ND 2500 13-Inch Reel CSD88539NDT 250 7-Inch Reel SO-8 Plastic
Package Tape and
Reel Absolute Maximum Ratings
TA = 25В°C 1 nC VGS = 6 V Ordering Information 3 Description S1 UNIT VDS 5 D1 VALUE UNIT VDS Drain-to-Source Voltage 60 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 15 ID Continuous Drain Current (Silicon limited),
TC = 25В°C 11.7 (1) Continuous Drain Current D1
D2
D2 A 6.3 IDM Pulsed Drain Current (2) 46 A PD Power Dissipation(1) 2.1 W TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse
ID = 22 A, L = 0.1 mH, RG = 25 Ω 24 mJ (1) Typical RθJA = 60°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06inch thick FR4 PCB
(2) Pulse duration ≤ 300 μs, duty cycle ≤ 2% RDS(on) vs VGS Gate Charge
10
TC = 25В°C, I D = 5A
TC = 125°C, I D = 5A 54 VGS -Gate-to-Source Voltage (V) RDS(on) -On-State Resistance (mΩ) 60 48
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