Datasheet Texas Instruments CSD85301Q2 — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD85301Q2 |
CSD85301Q2双N沟道NexFET™功率MOSFET
数据表
CSD85301Q2 20 V Dual N-Channel NexFET Power MOSFETs datasheet
PDF, 1.2 Mb, 档案已发布: Dec 17, 2014
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状态
| CSD85301Q2 | CSD85301Q2T | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No |
打包
| CSD85301Q2 | CSD85301Q2T | |
|---|---|---|
| N | 1 | 2 |
| Pin | 6 | 6 |
| Package Type | DQK | DQK |
| Package QTY | 3000 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 8531 | 8531 |
| Width (mm) | 2 | 2 |
| Length (mm) | 2 | 2 |
| Thickness (mm) | .75 | .75 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD85301Q2 | CSD85301Q2T |
|---|---|---|
| Configuration | Dual | Dual |
| IDM, Max Pulsed Drain Current(Max), A | 26 | 26 |
| Package, mm | SON2x2 | SON2x2 |
| QG Typ, nC | 4.2 | 4.2 |
| QGD Typ, nC | 1 | 1 |
| RDS(on) Typ at VGS=4.5V, mOhm | 23 | 23 |
| Rds(on) Max at VGS=4.5V, mOhms | 27 | 27 |
| VDS, V | 20 | 20 |
| VGS, V | 10 | 10 |
| VGSTH Typ, V | 0.9 | 0.9 |
生态计划
| CSD85301Q2 | CSD85301Q2T | |
|---|---|---|
| RoHS | Compliant | Compliant |
模型线
系列: CSD85301Q2 (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor