Datasheet Fairchild FQP13N10 — 数据表

FQP13N10 -N-Channel QFET® MOSFET November 2013 FQP13N10
N-Channel QFET® MOSFET
100 V, 12.8 A, 180 m Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features 12.8 A, 100 V, RDS(on) = 180 m (Max.) @ VGS = 10 V, ID= 6.4 A Low Gate Charge (Typ. 12 nC) Low Crss (Typ. 20 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating D GD S G TO-220
S Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage -Continuous (TC = 25°C) Drain Current -Continuous (TC = 100°C) Drain Current -Pulsed
(Note 1) FQP13N10 100 12.8 9.05 51.2 ± 25
(Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) -Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds 95 12.8 6.5 6.0 65 0.43 -55 to +175 300 Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. FQP13N10 2.31 62.5 Unit °C/W °C/W ©2000 Fairchild Semiconductor Corporation FQP13N10 Rev. C1 1 www.fairchildsemi.com FQP13N10 -N-Channel QFET® MOSFET Marking and Ordering Information
Part Number FQP13N10 Top Mark FQP13N10 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics
Symbol Parameter TC = 25°C unless otherwise noted. Test Conditions Min Typ Max Unit Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25°C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 100 --0.09 --1 10 100 -100 V V/°C A A nA nA On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 6.4 A VDS = 40 V, ID = 6.4 A 2.0 …