Datasheet Vishay VEMD5010X01 — 数据表

VEMD5010X01
www.vishay.com Vishay Semiconductors Silicon PIN Photodiode
FEATURES Package type: surface mount Package form: top view Dimensions (L x W x H in mm): 5 x 4 x 0.9 Radiant sensitive area (in mm2): 7.5 AEC-Q101 qualified High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times DESCRIPTION
VEMD5010X01 is a high speed and high sensitive PIN photodiode. It is a low profile surface mount device (SMD) including the chip with a 7.5 mm2 sensitive area detecting visible and near infrared radiation. Angle of half sensitivity: = ± 65° Floor life: 72 h, MSL 4, according to J-STD-020 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS High speed photo detector PRODUCT SUMMARY
COMPONENT VEMD5010X01 Ira (A) 48 (deg) ± 65 0.1 (nm) 430 to 1100 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION
ORDERING CODE VEMD5010X01 VEMD5010X01-GS15 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 1000 pcs, 1000 pcs/reel MOQ: 5000 pcs, 5000 pcs/reel PACKAGE FORM Top view Top view ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient ESD safety HBM ± 2000 V, 1.5 k, 100 pF, 3 pulses Acc. reflow solder profile fig. 8 Tamb 25 °C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA ESDHBM VALUE 20 215 110 -40 to +110 -40 to +110 260 350 2 UNIT V mW °C °C °C °C K/W kV Rev. 1.0, 04-Sep-14 Document Number: 84202 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5010X01
www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Noise equivalent power Rise time Fall time VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm TEST CONDITION IF = 50 mA IR = 100 A, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm …